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| BAR80 Silicon RF Switching Diode Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking AAs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 35 100 150 -55 ... 125 -55 ... 150 Unit V mA C Operating temperature range Storage temperature 1 Aug-17-2001 BAR80 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Series inductance chip to ground Application information Shunt signal isolation IF = 10 mA, f = 2 GHz, RG=RL =50 Shunt insertion loss VR = 5 V, f = 2 GHz, RG=RL =50 IL SI Unit max. 20 1 nA V typ. - IR VF 0.8 CT 0.6 rf Ls 1 0.92 0.5 0.14 1.6 1.3 0.7 - pF - 23 0.15 - Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 2 Aug-17-2001 nH dB BAR80 Forward current IF = f (TS ) 160 mA 120 IF 100 80 60 40 20 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - RthJS 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Aug-17-2001 BAR80 Forward resistance rf = f (IF ) f = 100MHz EHD07010 Diode capacitance CT = f (VR) f = 1MHz EHD07009 10 1 rf CT 2.0 pF 1.6 1.2 10 0 0.8 0.4 10 -1 10 -1 10 0 10 1 mA 10 2 0.0 0 10 20 V VR 30 F 4 Aug-17-2001 |
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